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Same model may have multiple batches, images only for reference.
VT6K1T2CR Real Image
Same model may have multiple batches, images only for reference.

VT6K1T2CR

Part No VT6K1T2CR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 0.1A VMT6
Datasheet
VT6K1T2CR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 1.2V Drive
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA
Maximum Rds On at Id,Vgs 3.5 Ohm @ 100mA, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Input Capacitance 7.1pF @ 10V
Maximum Power Dissipation 120mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VMT6
Win Source Part Number 1117770-VT6K1T2CR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name VT6K1
Introduction Date August 09, 2011
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian VT6K1T2CR CAD Model

Description

The Rohm Semiconductor electronic component is a high-quality dual N-channel FET that is designed for various electronic applications.

  • Supply and Demand Status: Balanced
  • Reliability: Reliable
  • Quality: High-quality materials
  • Power Dissipation: 120mW (Max)
  • Drain-Source Breakdown Voltage: 20V
  • Installation: Easy to install

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Pricing & Ordering

Quantity Unit Price Ext. Price
530+ $0.1090 $57.7700
1,295+ $0.0896 $116.0320
2,000+ $0.0868 $173.6000
2,755+ $0.0840 $231.4200
3,565+ $0.0811 $289.1215
4,765+ $0.0728 $346.8920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,460 pieces
MOQ: 530 pcs
Order Increment : 1 pcs
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