The SSD25N10 is an N-Channel enhancement mode MOSFET from SECOS. This MOSFET is designed for high-efficiency switching applications.

Applications

• DC-DC converters
• Power management circuits
• Motor control
• LED lighting

Features

• N-Channel enhancement mode
• Low on-resistance (RDS(on))
• Fast switching speed
• High avalanche ruggedness
• Available in various packages (TO-252, etc.)

Benefits

• High efficiency due to low RDS(on)
• Improved thermal performance
• Suitable for high-frequency applications
• Robust and reliable operation

Specifications

The SSD25N10 has a drain-source voltage (VDS) of 100V and a continuous drain current (ID) that varies depending on the package and operating conditions. The gate-source voltage (VGS) is typically ±20V. Detailed specifications, including RDS(on) values at different VGS, gate charge, and thermal characteristics, are available in the datasheet.