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B11NM60N

Part No B11NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 850pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 079361-B11NM60N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian B11NM60N CAD Model

Description

The B11NM60N is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver the efficiency and reliability required for modern power management and switching applications. With its robust design and advanced manufacturing techniques, the B11NM60N is suitable for a wide range of applications including power supplies, motor control, and high-efficiency converters.

Key Features

  • Low On-Resistance: The B11NM60N boasts a low on-resistance, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Switching Speed: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal switching losses and better performance.
  • 100% Avalanche Tested: Reliability is a key concern in power applications, and the B11NM60N is guaranteed to withstand harsh conditions, having been 100% avalanche tested.
  • High Current Capability: The device is capable of handling high current loads, making it suitable for demanding applications that require robust power handling.

Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Systems
  • LED Lighting
  • Automotive and Industrial Applications

Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 600V Continuous Drain Current (I<sub>D) 11A Power Dissipation (P<sub>D) 150W Operating Temperature Range -55°C to +150°C

In summary, the STMicroelectronics B11NM60N is a powerful and reliable N-Channel MOSFET that offers low on-resistance, high switching speed, and high current capability. Its ruggedness and efficiency make it an excellent choice for a variety of power applications where performance and durability are paramount.

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