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P16NF06FP

Part No P16NF06FP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 11A TO-220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 315pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 037080-P16NF06FP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian P16NF06FP CAD Model

Description

STMicroelectronics P16NF06FP - N-Channel Power MOSFET

The P16NF06FP is a robust N-channel Power MOSFET from STMicroelectronics, designed to deliver high-performance switching applications. This MOSFET is part of STMicroelectronics' STP Series, which is renowned for its efficiency and reliability. The device is encapsulated in a TO-220FP package, which is widely used in the industry and ensures a good balance between compactness and thermal performance.

The P16NF06FP MOSFET is capable of handling continuous drain currents up to 16A, making it suitable for a wide range of applications, including power supplies, motor control, and high-efficiency DC-DC converters. With a drain-source voltage (V<sub>DS) of 60V, it can comfortably operate in most medium voltage scenarios. The device's low on-resistance (R<sub>DS(on)) of typically 0.1Ω at V<sub>GS = 10V ensures high efficiency and low conduction losses.

One of the key features of the P16NF06FP is its fast switching speed, which is essential for reducing switching losses in power conversion systems. This is complemented by its gate charge (Q<sub>g), which is optimized to achieve the best compromise between conduction and switching losses. The device also boasts excellent ruggedness, with a 100% avalanche tested design that ensures reliability under stressful conditions.

The P16NF06FP includes built-in protection features such as thermal shutdown and overcurrent protection, which contribute to the safe operation of the end application. These features help prevent damage to the MOSFET and the system it is a part of, during abnormal operating conditions or fault events.

For designers and engineers, the P16NF06FP offers a solution that combines performance with ease of use. Its standardized package allows for straightforward integration into a wide range of circuit designs. Whether for industrial applications, consumer electronics, or automotive systems, the P16NF06FP is a reliable choice for efficient power management.

Overall, the STMicroelectronics P16NF06FP N-Channel Power MOSFET is a versatile component that provides a balance of power handling, efficiency, and robustness, making it an excellent choice for designers looking to optimize their power management solutions.

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