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Q1NK60ZR

Part No Q1NK60ZR
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 0.3A TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging AMMO PACKAGE
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 6.9nC @ 10V
Max Input Capacitance 94pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3W (Tc)
Maximum Rds On at Id,Vgs 15 Ohm @ 400mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Win Source Part Number 062307-Q1NK60ZR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian Q1NK60ZR CAD Model

Description

The Q1NK60ZR is a high-performance N-channel Power MOSFET from the renowned semiconductor manufacturer, STMicroelectronics. This electronic component is designed to deliver efficiency and reliability for a wide range of applications, including switching regulators, switching converters, motor drivers, and power management solutions.

Key Features

  • Low On-Resistance: The Q1NK60ZR features a low on-state resistance, which minimizes conduction losses and improves overall efficiency in power conversion applications.
  • High Switching Speed: With its fast switching capabilities, this MOSFET can operate at high frequencies, which is essential for applications such as DC-DC converters and high-frequency PWM circuits.
  • High Voltage Tolerance: This device is capable of withstanding high voltages, making it suitable for high-voltage switching applications.
  • Avalanche Ruggedness: The Q1NK60ZR is designed to handle energy pulses in the avalanche and commutation modes, ensuring robust performance and reliability under stressful conditions.
  • Low Gate Charge: A low gate charge reduces the power required to drive the MOSFET, thereby reducing the total power consumption of the system.
  • 100% Avalanche Tested: Each unit is tested for guaranteed performance in avalanche conditions, providing confidence in its durability and longevity.

Applications

The versatility of the Q1NK60ZR MOSFET makes it an ideal choice for a variety of electronic applications. Some common use cases include:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Drivers
  • DC-AC Inverters for Solar Power Systems
  • Motor Control Circuits
  • Power Management in Computing and Telecom Systems

Quality and Environmental Compliance

STMicroelectronics is committed to delivering high-quality products that meet rigorous environmental standards. The Q1NK60ZR is manufactured with this commitment in mind, ensuring that it complies with various international standards for environmental conservation and safety, including RoHS and REACH regulations.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.4123 $59.5353
27+ $4.4410 $119.9070
41+ $4.3024 $176.3984
56+ $4.1638 $233.1728
72+ $4.0252 $289.8144
97+ $3.6082 $349.9954
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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