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SCTH35N65G2V-7AG

Part No SCTH35N65G2V-7AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 650V 45A H2PAK-7 / N-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Packaging Reel - TR
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Surface Mount
Supplier Device Package H2PAK-7
Case / Package TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number SCTH35
RoHS Status ROHS3 Compliant
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -1138-SCTH35N65G2V-7AGDKR,-1138-SCTH35N65G2V-7AGCT,497-SCTH35N65G2V-7AGCT,497-SCTH35N65G2V-7AGTR,497-SCTH35N65G2V-7AGDKR,-1138-SCTH35N65G2V-7AGTR
Standard Package 1,000
Win Source Part Number 1325359-SCTH35N65G2V-7AG
Ultra Librarian 3D Model Ultra Librarian SCTH35N65G2V-7AG CAD Model

Description

Overview of SCTH35N65G2V-7AG

The SCTH35N65G2V-7AG is a cutting-edge silicon carbide Power MOSFET produced by STMicroelectronics, a global semiconductor leader. This device is designed to meet the demanding requirements of high-efficiency energy conversion systems. It is particularly suitable for applications such as electric vehicle (EV) chargers, solar inverters, and switch-mode power supplies.

Key Features

  • High Voltage Tolerance: With a breakdown voltage of 650V, the SCTH35N65G2V-7AG can handle high voltage operations, making it ideal for power applications that require a wide safety margin.
  • Low On-Resistance: The device boasts a low on-resistance of 35 mΩ, which translates to reduced conduction losses and improved overall efficiency.
  • Fast Switching Speed: Thanks to its silicon carbide construction, this MOSFET offers fast switching capabilities, which is crucial for reducing switching losses in power conversion systems.
  • High-Temperature Operation: The SCTH35N65G2V-7AG is capable of operating at high temperatures, ensuring reliability and performance even under strenuous conditions.
  • Robust Package: Encased in a HiP247 package, the MOSFET offers superior thermal performance and mechanical robustness.

Applications

The versatility of the SCTH35N65G2V-7AG allows it to be used in a wide range of applications. Its robustness and high efficiency make it particularly well-suited for:

  • Electric vehicle (EV) charging stations
  • Photovoltaic (solar) inverters
  • Uninterruptible power supplies (UPS)
  • High-performance switch-mode power supplies (SMPS)
  • Energy storage systems
  • Induction heating systems

Environmental and Quality Certifications

STMicroelectronics is committed to environmental sustainability and quality. The SCTH35N65G2V-7AG is manufactured with these principles in mind, ensuring that it meets various international standards and certifications. Customers can trust this product for its reliability and eco-friendly attributes.

In conclusion, the SCTH35N65G2V-7AG from STMicroelectronics represents a blend of performance, efficiency, and reliability, making it an excellent choice for designers looking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.0775 $64.3100
7+ $15.0403 $105.2821
11+ $14.5217 $159.7387
15+ $13.4844 $202.2660
20+ $12.9658 $259.3160
25+ $12.4471 $311.1775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,010 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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