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STB13NK60ZT4

Part No STB13NK60ZT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 13A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 2030pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 550 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031063-STB13NK60ZT4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB13NK60ZT4 CAD Model

Description

Product Overview: STB13NK60ZT4 from STMicroelectronics

The STB13NK60ZT4 is a robust and high-performance N-channel Power MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This product is designed using ST's innovative MDmesh™ technology, which combines a vertical structure with a strip layout to deliver low on-resistance and reduced gate charge. The result is a MOSFET that offers superior switching performance and energy efficiency, making it an ideal choice for a wide range of power conversion applications.

Key Features

  • High Voltage Capability: The STB13NK60ZT4 is capable of handling high voltages, with a drain-source voltage (V<sub>DS) of 600V, which is suitable for high voltage applications such as power supplies and lighting systems.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) of only 0.85 ohm, this MOSFET ensures minimal power loss during operation, enhancing the overall efficiency of the application it is used in.
  • Reduced Gate Charge: The device features a low gate charge (Q<sub>g), which results in faster switching speeds and reduced switching losses, especially beneficial in high-frequency power switching applications.
  • Zener-Protected: The gate of the STB13NK60ZT4 is protected by an integrated Zener diode, which safeguards the device against electrostatic discharge (ESD) and enhances its ruggedness.
  • High dv/dt Capability: This MOSFET can tolerate high voltage transients, making it reliable in environments where electrical noise and spikes are prevalent.

Applications

The STB13NK60ZT4 is versatile and can be used in a variety of applications, including:

  • Switching power supplies
  • Motor control systems
  • Power inverters
  • Power factor correction circuits
  • LED lighting solutions

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STB13NK60ZT4 is no exception and is manufactured to ensure performance stability and longevity, even under demanding conditions. With its advanced features and proven technology, the STB13NK60ZT4 is an excellent choice for designers who require a reliable and efficient power MOSFET for their high-voltage applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6669 $58.3415
85+ $1.3678 $116.2630
135+ $1.3250 $178.8750
185+ $1.2823 $237.2255
235+ $1.2395 $291.2825
315+ $1.1113 $350.0595
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,800 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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