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STB155N3LH6

Part No STB155N3LH6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 80nC @ 5V
Max Input Capacitance 3800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1102765-STB155N3LH6
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STB155N3LH6 CAD Model

Description

STB155N3LH6 - N-channel 30 V, 0.0015 Ω typ., 120 A STripFET™ H6 Power MOSFET in a D²PAK package by STMicroelectronics

The STB155N3LH6 is a highly efficient N-channel power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This state-of-the-art MOSFET is part of the STripFET™ H6 series, which is renowned for its low on-resistance and low gate charge, making it particularly suitable for high-efficiency power conversion applications.

With a maximum voltage rating of 30 V and an incredibly low typical on-resistance of just 0.0015 Ω, the STB155N3LH6 is optimized for superior performance in power management tasks. The device is capable of handling a continuous current of up to 120 A, making it an excellent choice for high current applications such as DC/DC converters, motor control circuits, and power management systems.

The D²PAK package of the STB155N3LH6 ensures a compact footprint while providing excellent thermal performance. This packaging, combined with the MOSFET's low on-resistance, helps to reduce power losses and improve overall system efficiency, which is crucial for energy-sensitive designs.

Key features of the STB155N3LH6 include:

  • 100% avalanche tested, ensuring reliability and robustness in challenging conditions.
  • Very low gate charge (Qg), which minimizes switching losses and enables fast switching operations.
  • Low threshold voltage (Vth) for improved threshold stability and better performance at low voltages.
  • High continuous current rating (Id) for demanding power applications.

Applications for the STB155N3LH6 are diverse and can be found in areas such as:

  • Switch Mode Power Supplies (SMPS)
  • High-efficiency DC/DC converters
  • Motor control systems
  • Power management solutions
  • Load switches and battery management

The STB155N3LH6 from STMicroelectronics represents a blend of the latest MOSFET technology with robust package design, ensuring high performance, reliability, and efficiency for advanced electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.4058 $54.0580
23+ $4.4355 $102.0165
35+ $4.2969 $150.3915
49+ $4.1583 $203.7567
63+ $4.0197 $253.2411
84+ $3.6039 $302.7276
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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