STB15N80K5 - N-Channel MOSFET by STMicroelectronics

The STB15N80K5 is a state-of-the-art N-channel MOSFET from STMicroelectronics, designed to deliver high efficiency and power density with a focus on energy savings. This device is part of STMicroelectronics' MDmesh™ K5 series, which utilizes innovative proprietary technology to achieve outstanding on-resistance and dynamic performance.

With a breakdown voltage of 800V, the STB15N80K5 is optimized for high-voltage applications, making it an ideal choice for switched-mode power supplies, lighting, welding, and solar inverters. Its robust design ensures reliability and longevity in demanding environments.

The MOSFET features a low threshold voltage which allows for easy drive and a reduced gate charge (Qg), enhancing the overall efficiency of the system. This characteristic also contributes to the reduction of switching losses, enabling faster switching frequencies and improved thermal management.

The STB15N80K5 incorporates advanced technology that minimizes on-state resistance (Rds(on)), which is crucial for power-intensive applications. This results in lower conduction losses and improves the total energy efficiency of the end application. Moreover, the device is engineered to provide a high avalanche ruggedness, ensuring it can withstand challenging conditions without performance degradation.

Key Features:

• V_DS: 800V
• Rds(on) max: 0.270 Ω
• Low gate charge and input capacitance
• High dv/dt and avalanche capabilities
• Low threshold drive

Applications:

• Switched-mode power supplies (SMPS)
• LED lighting applications
• Welding equipment
• Solar inverters
• Power factor correction circuits

The STB15N80K5 is available in a TO-220 package, which is widely used and suitable for through-hole mounting, providing flexibility for various PCB designs. As part of STMicroelectronics' commitment to environmental sustainability, the STB15N80K5 is also compliant with RoHS regulations, ensuring it meets the latest environmental standards for electronic components.