The STB16NK65Z is a high-performance N-channel Power MOSFET produced using STMicroelectronics' advanced STripFET™ II technology. This device is tailored for high-efficiency power conversion applications, offering a perfect blend of low on-resistance and fast switching characteristics. With a drain-source voltage of 650V, it is particularly suitable for high voltage operations, making it an excellent choice for switch-mode power supplies, power factor correction circuits, and electronic ballasts.

The MOSFET's low threshold drive and gate charge make it easy to drive, thereby reducing the power losses associated with driving the MOSFET and improving the overall efficiency of the application. Its robust design ensures reliable operation even in the most demanding conditions, with an operating junction temperature range from -55°C to 150°C.

The STB16NK65Z comes in a surface-mount D2PAK package, which is known for its compact size and excellent power dissipation capabilities. This package is ideal for use in space-constrained applications while still providing the thermal performance required for high power density designs.

Key Features

• Exceptional R<sub>DS(on) of 0.23Ω at V<sub>GS = 10V
• High drain-source voltage (V<sub>DSS) of 650V for high-voltage applications
• Continuous drain current (I<sub>D) of 16A at 25°C
• Low gate charge (Q<sub>g) for efficient switching
• Low threshold voltage (V<sub>th) for ease of driving the MOSFET
• 100% avalanche tested for guaranteed reliability
• High dv/dt capability for better ruggedness
• Compliance with the European Union directives on the restriction of hazardous substances (RoHS)

Whether you are designing an energy-efficient power supply or looking to reduce the size of your power management solutions, the STB16NK65Z is an excellent choice that combines performance, reliability, and environmental consciousness.