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STB26N60M2

Part No STB26N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL 600V 20A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 600 V 20A (Tc) 169W (Tc) Surface Mount D²PAK
Manufacturer STMicroelectronics
Series MDmesh™ M2
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK
Family Name STB26
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-17546-6, 497-17546-1, 497-17546-2
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935240-STB26N60M2
Ultra Librarian 3D Model Ultra Librarian STB26N60M2 CAD Model

Description

Introducing the STB26N60M2 - Power MOSFET by STMicroelectronics

The STB26N60M2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This device is a part of the MDmesh™ M2 series, which is renowned for its excellent energy efficiency and high performance in a wide range of applications.

At the heart of the STB26N60M2 is ST's innovative MDmesh™ technology that combines a vertical structure with a proprietary strip layout. This design ensures an optimal balance between on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g), leading to a highly efficient power conversion process. With a maximum continuous drain current (I<sub>D) of 20A and a drain-source voltage (V<sub>DS) of 600V, this MOSFET is capable of handling high power densities and is suitable for a variety of demanding applications.

The device also boasts a low threshold voltage (V<sub>th), which enhances its ability to perform at lower gate voltages, further reducing power losses. Its fast recovery diode is an additional feature that contributes to the overall efficiency, making it an excellent choice for high-speed switching applications.

The STB26N60M2 comes in a robust and compact TO-220 package, offering not only a space-saving solution but also ease of integration into various circuit designs. Its high dv/dt capability ensures reliability under harsh operating conditions, making it an ideal choice for applications such as switch-mode power supplies (SMPS), lighting applications, welding equipment, and solar inverters.

STMicroelectronics has also placed a strong emphasis on environmental sustainability with the STB26N60M2. It is designed to meet the stringent requirements of the RoHS directive, ensuring that it is free from hazardous substances and compliant with global environmental standards.

Overall, the STB26N60M2 from STMicroelectronics is a testament to the company's commitment to providing advanced power MOSFETs that offer high efficiency, reliability, and environmental friendliness. Whether for industrial, consumer, or automotive applications, this power MOSFET is engineered to deliver superior performance where it matters most.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5750 $59.2250
55+ $2.1129 $116.2095
85+ $2.0468 $173.9780
117+ $1.9808 $231.7536
151+ $1.9148 $289.1348
202+ $1.7167 $346.7734
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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