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STB46N60M6

Part No STB46N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB46
Other Names 497-STB46N60M6TR
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278145-STB46N60M6
Ultra Librarian 3D Model Ultra Librarian STB46N60M6 CAD Model

Description

STB46N60M6 - High Performance N-Channel Power MOSFET

The STB46N60M6 from STMicroelectronics is a state-of-the-art N-channel Power MOSFET designed to deliver high efficiency and reliability for a wide range of applications. This robust component is part of STMicroelectronics' MDmesh™ M6 series, which is renowned for its excellent on-state resistance (R<sub>DS(on)) and superior switching performance.

With a drain-source voltage (V<sub>DS) of 600V, the STB46N60M6 is well-suited for high voltage applications that require a MOSFET with the ability to handle significant power levels. The device also boasts a continuous drain current (I<sub>D) of up to 46A at 25°C, making it capable of driving high current loads efficiently. The low threshold voltage ensures that the MOSFET can be easily controlled and switched with standard gate drive voltages.

One of the key features of the STB46N60M6 is its low gate charge (Q<sub>g), which results in reduced switching losses and thus, improves the overall efficiency of the system. This characteristic, combined with the optimized capacitance profile, enables faster switching speeds, which is essential for modern high-frequency power conversion systems.

The device is encapsulated in a TO-220 package, offering excellent thermal performance and making it easy to integrate into various circuit designs. The package is designed to handle high levels of heat dissipation, ensuring that the MOSFET operates reliably even under stressful conditions.

Applications for the STB46N60M6 are diverse and include switch-mode power supplies (SMPS), lighting ballasts, welding equipment, power factor correction circuits, and other power conversion systems that demand high efficiency and power density. Its robustness also makes it suitable for harsh environments where reliability is critical.

STMicroelectronics provides comprehensive technical support and documentation for the STB46N60M6, including datasheets, application notes, and simulation models, to assist designers in implementing this component into their designs with confidence. With its combination of high performance, efficiency, and reliability, the STB46N60M6 is an excellent choice for designers looking to enhance the performance of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.5479 $58.9311
22+ $5.3728 $118.2016
34+ $5.2048 $176.9632
46+ $5.0370 $231.7020
60+ $4.8690 $292.1400
80+ $4.3654 $349.2320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,250 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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