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STB60N55F3

Part No STB60N55F3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A D2PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 32A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1102801-STB60N55F3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB60N55F3 CAD Model

Description

STB60N55F3 - STMicroelectronics N-Channel MOSFET

The STB60N55F3 is a state-of-the-art N-Channel MOSFET from STMicroelectronics, renowned for its high efficiency and performance in a wide range of power management applications. This power MOSFET is designed using ST's advanced MDmesh™ III technology, which combines the benefits of reduced on-resistance, high dv/dt capability, and exceptional switching performance, making it an ideal choice for high-efficiency solutions.

The STB60N55F3 is capable of handling continuous drain currents up to 60A, with a 55V drain-source breakdown voltage, providing a robust platform for designers to work with. Its RDS(on) value is impressively low, which minimizes conduction losses and improves overall system efficiency. This feature, along with its 100% avalanche tested design, ensures reliability and durability even under tough operating conditions.

One of the key features of this MOSFET is its low gate charge (Qg), which enhances its switching performance. This is particularly beneficial in applications such as Switch Mode Power Supplies (SMPS), lighting, DC-DC converters, and high-efficiency power inverters, where fast and efficient switching is crucial.

The STB60N55F3 comes in a surface-mount D2PAK package, which is not only robust and capable of handling high thermal loads, but also suitable for compact PCB layouts. This packaging, combined with the MOSFET's low threshold voltage, ensures ease of drive and a simplified design process, allowing engineers to achieve high-performance power designs with reduced form factors.

With its exceptional ruggedness, the STB60N55F3 is also characterized by its high avalanche ruggedness, making it suitable for applications that are prone to hard switching conditions. This MOSFET also features a Zener-protected gate, which provides protection against electrostatic discharge (ESD) and enhances its ruggedness further.

In summary, the STB60N55F3 from STMicroelectronics is a versatile and reliable component that is well-suited for a variety of demanding applications, offering an excellent balance of performance, efficiency, and thermal management. Its advanced technology and robust design make it a go-to choice for engineers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.3040 $60.2560
33+ $3.5315 $116.5395
51+ $3.4213 $174.4863
70+ $3.3108 $231.7560
91+ $3.2005 $291.2455
121+ $2.8694 $347.1974
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Availability: 10,200 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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