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STB80NF55L-06T4

Part No STB80NF55L-06T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 136nC @ 5V
Max Input Capacitance 4850pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1102813-STB80NF55L-06T4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB80NF55L-06T4 CAD Model

Description

STB80NF55L-06T4 - STMicroelectronics

The STB80NF55L-06T4 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in the semiconductor industry. Designed to deliver efficiency and power density, this component is a perfect choice for a wide range of applications, including switch-mode power supplies, motor control, and power management tasks.

Key Features

  • Low On-Resistance: The STB80NF55L-06T4 boasts an exceptionally low on-resistance (R<sub>DS(on)) of just 0.006 Ohm, which significantly reduces conduction losses and enhances overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) of 80A, this MOSFET can handle high current loads, making it suitable for demanding applications.
  • High Voltage Threshold: The device can sustain a drain-source voltage (V<sub>DS) up to 55V, providing a comfortable margin for a variety of electronic circuits.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability under stress conditions.
  • Low Gate Charge: The reduced gate charge (Q<sub>g) allows for faster switching speeds, which is essential for high-frequency operations.

Applications

The STB80NF55L-06T4 is versatile enough to fit into numerous applications, including but not limited to:

  • Power supply units (PSUs)
  • DC/DC converters
  • Motor drives and inverters
  • Automotive applications
  • LED lighting solutions

Package and Mounting

This MOSFET is presented in a D2PAK package, also known as TO-263, which is known for its robustness and excellent thermal performance. The STB80NF55L-06T4 is surface-mountable and compatible with standard soldering techniques, ensuring ease of integration into various PCB designs.

Environmental and Quality Certifications

STMicroelectronics commits to high-quality standards and environmental responsibility. The STB80NF55L-06T4 adheres to RoHS and complies with other relevant environmental directives. Customers can expect a product that not only meets industry standards for performance but also for sustainability.

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