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STB85NF55T4

Part No STB85NF55T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 3700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 066297-STB85NF55T4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB85NF55T4 CAD Model

Description

The STB85NF55T4 is a state-of-the-art N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This product is designed to meet the high efficiency and reliability requirements of modern electronic applications. With its robust and innovative features, the STB85NF55T4 is well-suited for a wide range of power management tasks.

Key Features

  • Low On-Resistance: The STB85NF55T4 boasts an exceptionally low on-resistance (RDS(on)), which enhances its efficiency by minimizing conduction losses.
  • High Current Capability: With the ability to handle continuous drain currents (ID) at high levels, this MOSFET is capable of driving significant loads without performance degradation.
  • 100% Avalanche Tested: Each unit undergoes rigorous testing to ensure reliability and performance even under extreme conditions.
  • Improved dv/dt Capability: The device is engineered to withstand high voltage changes over time, ensuring stable operation in applications with rapid switching requirements.

Applications

The versatility of the STB85NF55T4 allows it to be used in various high-performance applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC converters
  • Motor Control Systems
  • Automotive applications
  • Power management solutions

Technical Specifications

Parameter Value
Drain-source Voltage (VDS) 55V
Continuous Drain Current (ID) 80A
Power Dissipation (PD) 300W
Operating Temperature Range -55°C to 175°C

STMicroelectronics' commitment to innovation and quality makes the STB85NF55T4 a reliable and efficient choice for designers and engineers looking to optimize their power management systems. With its advanced features and robust design, this Power MOSFET is ready to meet the challenges of the most demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,800 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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