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STB85NS04Z

Part No STB85NS04Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 33V 80A D2PAK / Trans MOSFET N-CH 33V 80A 3-Pin(2+Tab) D2PAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series SAFeFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 33V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2500pF @ 25V
Vgs (Maximum) ±18V
Power Dissipation (Maximum) 215W (Tc)
Rds On (Maximum) @ Id, Vgs 15 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 769610-STB85NS04Z
Popularity Medium
Supply and Demand Status Limited
Family Name STB85NS04Z
Introduction Date September 25, 2006
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian STB85NS04Z CAD Model

Description

The STB85NS04Z is a robust N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is designed to deliver high efficiency and power density for a wide range of applications, making it a versatile choice for designers and engineers.

Key Features

  • Low On-Resistance: The STB85NS04Z boasts a low on-resistance, which means it has a reduced voltage drop across the device when conducting. This characteristic leads to higher efficiency and less power loss in applications.
  • High Current Capability: With the ability to handle a continuous drain current of up to 80A, this MOSFET can support high current applications with ease.
  • 100% Avalanche Tested: This device is guaranteed to withstand stressful conditions, as it is thoroughly tested for avalanche ruggedness, ensuring reliability in applications where the MOSFET may experience high energy pulses.
  • Low Gate Charge: A low gate charge allows for faster switching speeds, which is beneficial in applications where switching efficiency is critical.
  • Application Versatility: The STB85NS04Z is suitable for a variety of applications, including DC/DC converters, motor drives, and power management functions in computing and telecommunications.

Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 40V Continuous Drain Current (I<sub>D) 80A Power Dissipation (P<sub>D) 300W Operating Temperature Range -55°C to 175°C Package D2PAK

The STB85NS04Z is an excellent choice for designers looking for a high-performance N-Channel MOSFET. With its combination of low on-resistance, high current capability, and fast switching speeds, it stands out as a reliable and efficient component in a variety of power applications.

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