The STB85NS04Z is a robust N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is designed to deliver high efficiency and power density for a wide range of applications, making it a versatile choice for designers and engineers.
Key Features
- Low On-Resistance: The STB85NS04Z boasts a low on-resistance, which means it has a reduced voltage drop across the device when conducting. This characteristic leads to higher efficiency and less power loss in applications.
- High Current Capability: With the ability to handle a continuous drain current of up to 80A, this MOSFET can support high current applications with ease.
- 100% Avalanche Tested: This device is guaranteed to withstand stressful conditions, as it is thoroughly tested for avalanche ruggedness, ensuring reliability in applications where the MOSFET may experience high energy pulses.
- Low Gate Charge: A low gate charge allows for faster switching speeds, which is beneficial in applications where switching efficiency is critical.
- Application Versatility: The STB85NS04Z is suitable for a variety of applications, including DC/DC converters, motor drives, and power management functions in computing and telecommunications.
Specifications
Parameter
Value
Drain-Source Voltage (V<sub>DS)
40V
Continuous Drain Current (I<sub>D)
80A
Power Dissipation (P<sub>D)
300W
Operating Temperature Range
-55°C to 175°C
Package
D2PAK
The STB85NS04Z is an excellent choice for designers looking for a high-performance N-Channel MOSFET. With its combination of low on-resistance, high current capability, and fast switching speeds, it stands out as a reliable and efficient component in a variety of power applications.