The STB9NK80Z is a high-performance N-Channel Power MOSFET produced by STMicroelectronics, utilizing their advanced SuperMESH™ technology. This Power MOSFET is designed to offer extremely low on-resistance and gate charge, resulting in a product that is highly efficient and suitable for a wide range of power applications.

Key Features

• High Voltage Capability: The STB9NK80Z operates at a drain-source voltage of 800V, making it ideal for high voltage applications.
• Low On-Resistance: With an on-resistance of just 0.85 Ohm, this MOSFET provides excellent conduction performance, reducing power loss and improving efficiency.
• High Current Capability: It can handle continuous drain currents up to 7A, making it suitable for high-power circuits.
• Reduced Gate Charge: The device features a low gate charge, which minimizes switching losses and enables faster switching speeds.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability under stress conditions.
• Zener-Protected: The gate-source of the MOSFET is protected with an integrated Zener diode, providing enhanced protection against overvoltage.

Applications

The versatility of the STB9NK80Z makes it suitable for a broad range of applications, including:

• Switching power supplies
• Power converters
• Motor control
• Power management functions
• Lighting applications

Quality and Reliability

STMicroelectronics is known for its commitment to quality, and the STB9NK80Z is no exception. This MOSFET is manufactured to meet high standards of performance and reliability, ensuring that it meets the needs of demanding power applications.

Package Information

The STB9NK80Z comes in a D2PAK package, which is a surface-mount package that is suitable for use in compact designs where space is at a premium. The D2PAK package also provides excellent thermal performance, which is critical for maintaining reliability and longevity in power applications.