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STD10NM65N

Part No STD10NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 9A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 850pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 115556-STD10NM65N
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian STD10NM65N CAD Model

Description

STMicroelectronics STD10NM65N - N-channel 650 V, 0.47 Ohm typ., 10 A MDmesh™ V Power MOSFET in DPAK package

The STD10NM65N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is a part of their MDmesh™ V series. This device is optimized for high voltage switching applications and is designed to provide exceptional efficiency and power density. With a drain-source voltage of 650 V, it is particularly suitable for applications that demand high voltage capabilities.

Key Features:

  • Low On-Resistance: The STD10NM65N boasts an on-resistance (RDS(on)) of only 0.47 Ohm (typical), which contributes to its high efficiency by minimizing conduction losses.
  • High Current Rating: With a continuous drain current (ID) of 10 A, this MOSFET can handle significant power, making it ideal for a wide range of power conversion applications.
  • Reduced Gate Charge: The device features a low gate charge (Qg), which facilitates faster switching and reduces switching losses, enhancing overall performance in high-frequency circuits.
  • 100% Avalanche Tested: Ensuring reliability and robustness, the STD10NM65N is guaranteed to withstand harsh conditions, as it has been fully avalanche tested.
  • High dv/dt Capability: The MOSFET's high dv/dt capability ensures stable operation under fast-switching conditions and provides improved system reliability.
  • DPAK Package: The device comes in a surface-mount DPAK package, which is known for its compact footprint and good thermal performance, making it suitable for space-constrained applications.

Applications:

The STD10NM65N is designed for a variety of applications, including but not limited to:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC Converters
  • Solar Inverters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)

The combination of low on-resistance, high current capacity, and efficient switching characteristics make the STD10NM65N a versatile and reliable choice for engineers looking to improve power efficiency and performance in their designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2943 $58.2435
110+ $1.0621 $116.8310
170+ $1.0289 $174.9130
235+ $0.9956 $233.9660
305+ $0.9625 $293.5625
405+ $0.8629 $349.4745
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,680 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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