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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 850pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 115556-STD10NM65N
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian STD10NM65N CAD Model

Description

STMicroelectronics STD10NM65N - N-channel 650 V, 0.47 Ohm typ., 10 A MDmesh™ V Power MOSFET in DPAK package

The STD10NM65N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is a part of their MDmesh™ V series. This device is optimized for high voltage switching applications and is designed to provide exceptional efficiency and power density. With a drain-source voltage of 650 V, it is particularly suitable for applications that demand high voltage capabilities.

Key Features:

  • Low On-Resistance: The STD10NM65N boasts an on-resistance (R<sub>DS(on)) of only 0.47 Ohm (typical), which contributes to its high efficiency by minimizing conduction losses.
  • High Current Rating: With a continuous drain current (I<sub>D) of 10 A, this MOSFET can handle significant power, making it ideal for a wide range of power conversion applications.
  • Reduced Gate Charge: The device features a low gate charge (Q<sub>g), which facilitates faster switching and reduces switching losses, enhancing overall performance in high-frequency circuits.
  • 100% Avalanche Tested: Ensuring reliability and robustness, the STD10NM65N is guaranteed to withstand harsh conditions, as it has been fully avalanche tested.
  • High dv/dt Capability: The MOSFET's high dv/dt capability ensures stable operation under fast-switching conditions and provides improved system reliability.
  • DPAK Package: The device comes in a surface-mount DPAK package, which is known for its compact footprint and good thermal performance, making it suitable for space-constrained applications.

Applications:

The STD10NM65N is designed for a variety of applications, including but not limited to:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC/DC Converters
  • Solar Inverters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)

The combination of low on-resistance, high current capacity, and efficient switching characteristics make the STD10NM65N a versatile and reliable choice for engineers looking to improve power efficiency and performance in their designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4023 $56.0920
90+ $1.1506 $103.5540
135+ $1.1146 $150.4710
190+ $1.0787 $204.9530
240+ $1.0427 $250.2480
325+ $0.9349 $303.8425
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 4,420 pieces
MOQ: 40 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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