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STD3NK100Z

Part No STD3NK100Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 2.5A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 601pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 6 Ohm @ 1.25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031138-STD3NK100Z
Family Name STD3NK100Z
Introduction Date May 12, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STD3NK100Z CAD Model

Description

STD3NK100Z - STMicroelectronics N-Channel MOSFET

The STD3NK100Z is a high-performance, N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is part of STMicroelectronics' STripFET™ II series, which is renowned for its low on-resistance and low gate charge, making it an excellent choice for power efficiency and switching performance.

With a drain-source voltage (VDS) of 1000V, the STD3NK100Z is designed to handle high voltage applications with ease. The MOSFET has a continuous drain current (ID) rating of 3A, which allows it to drive moderate loads. Additionally, the device boasts a low threshold voltage (VGS(th)), providing the ability to be driven by low-voltage control signals, enhancing its versatility in various applications.

The STD3NK100Z utilizes Zener-protected SuperMESH™ technology, which combines the benefits of reduced on-resistance and high dv/dt capability. This protection feature ensures the device's robustness and reliability, even under stressful conditions, making it suitable for use in power supply and power conversion systems.

Designed for improved power density, the STD3NK100Z comes in a TO-252 (DPAK) package, which is not only compact but also offers excellent thermal performance. This makes it an ideal choice for space-constrained applications where efficient heat dissipation is critical.

Applications for the STD3NK100Z are diverse and include switch-mode power supplies (SMPS), LED lighting, DC-DC converters, motor control circuits, and other high-efficiency power management systems. Its high breakdown voltage and fast switching characteristics also make it suitable for high-voltage pulse applications.

STMicroelectronics provides comprehensive technical support for the STD3NK100Z, including detailed datasheets, application notes, and simulation models. This level of support ensures that designers can confidently integrate this MOSFET into their designs and optimize its performance for their specific applications.

In summary, the STD3NK100Z N-Channel MOSFET from STMicroelectronics is a robust and efficient solution for designers looking to improve power management in their electronic systems. Its combination of high voltage capability, low on-resistance, and compact packaging makes it a versatile and reliable component for a wide range of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0655 $53.2750
115+ $0.8743 $100.5445
180+ $0.8470 $152.4600
245+ $0.8196 $200.8020
320+ $0.7923 $253.5360
425+ $0.7104 $301.9200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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