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STD6NM60N

Part No STD6NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 420pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 920 mOhm @ 2.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 100660-STD6NM60N
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STD6NM60N CAD Model

Description

The STD6NM60N is a cutting-edge N-channel Power MOSFET from STMicroelectronics, which is a part of their MDmesh™ II series. This device is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies (SMPS), lighting, motor control, and industrial applications.

Key Features

  • Voltage Rating: With a drain-source voltage (V<sub>DS) of 600 V, the STD6NM60N is suitable for high voltage applications, providing a robust and efficient power handling capability.
  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)) of 0.45 Ohm typical, which contributes to its high efficiency by minimizing conduction losses.
  • Current Capacity: It can handle continuous drain current (I<sub>D) up to 6 A, making it capable of powering a wide range of electronic loads.
  • MDmesh™ II Technology: Utilizing STMicroelectronics' innovative MDmesh™ II technology, the STD6NM60N offers reduced gate charge (Q<sub>g), which enhances the switching performance and results in lower switching losses.
  • Thermal Performance: The device is encapsulated in a TO-252 (DPAK) package, which provides excellent thermal performance and simplifies the heat dissipation process.
  • 100% Avalanche Tested: Ensuring reliability and robustness, the STD6NM60N is guaranteed to be 100% avalanche tested, which means it can withstand high energy pulses in the avalanche and commutation mode.

Applications

The STD6NM60N is versatile and can be used in a variety of applications. Some of the typical applications include:

  • High-efficiency switch-mode power supplies (SMPS)
  • LED lighting solutions
  • DC-DC converters
  • Power management systems
  • Motor control circuits
  • Industrial applications

With its exceptional performance and robustness, the STD6NM60N from STMicroelectronics represents a reliable solution for designers looking to enhance power efficiency and thermal management in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,700 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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