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STF10NM65N

Part No STF10NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 9A TO-220FP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 850pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066335-STF10NM65N
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STF10NM65N CAD Model

Description

STF10NM65N Power MOSFET by STMicroelectronics

The STF10NM65N is a cutting-edge power MOSFET device designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of the MDmesh™ M5 series, which incorporates the fifth generation of STMicroelectronics' super-junction technology, offering remarkable efficiency and performance in a variety of power conversion applications.

With a drain-source voltage (VDS) of 650V, the STF10NM65N is engineered to handle high voltage operations with ease, making it an ideal choice for switch mode power supplies (SMPS), lighting applications, solar inverters, welding equipment, and other high-performance power conversion systems.

Key Features:

  • High Voltage Capability: The device's 650V rating ensures safe operation under high voltage conditions, providing ample headroom for spikes and surges often encountered in power circuits.
  • Low On-Resistance (RDS(on)): With an exceptionally low on-resistance, the STF10NM65N minimizes conduction losses, leading to higher efficiency and reduced heat generation.
  • Reduced Gate Charge (Qg): The optimized gate charge allows for faster switching speeds, which is crucial for improving the performance of high-frequency power circuits.
  • Enhanced Ruggedness: Its robust design ensures reliability and longevity, even under harsh operating conditions.
  • 100% Avalanche Tested: Each unit is thoroughly tested for avalanche ruggedness, ensuring the device can handle repetitive and unpredictable voltage spikes.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • Solar Inverters
  • Welding Equipment
  • High-Efficiency Power Converters

The STF10NM65N from STMicroelectronics is not just a testament to the company's innovation in power MOSFET technology, but also to their commitment to providing energy-efficient solutions to the electronics industry. With the integration of the STF10NM65N, designers and engineers can expect to achieve higher performance in their power management designs, while maintaining eco-friendly operation and reducing the overall carbon footprint of their products.

For detailed specifications, application notes, and additional resources, visit the STMicroelectronics website or contact an authorized distributor. The STF10NM65N is available in a TO-220FP package, offering a practical design for easy integration into a wide range of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3838 $59.5950
60+ $1.9559 $117.3540
92+ $1.8948 $174.3216
126+ $1.8337 $231.0462
163+ $1.7726 $288.9338
219+ $1.5892 $348.0348
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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