The STF10N80K5 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, designed to meet the efficiency and reliability demands of high-performance power electronics. This device is part of the MDmesh™ K5 series, which leverages advanced technology to provide excellent RDS(on) per area combined with superior switching performance.

Key Features

• High Voltage Rating: With a drain-source voltage (V_DS) of 800 V, the STF10N80K5 is suited for applications requiring high voltage capabilities.
• Low On-Resistance: The device boasts a typical on-resistance (RDS(on)) of 0.52 Ω, which enhances overall efficiency by minimizing conduction losses.
• High Current Capacity: With a continuous drain current (ID) of 10 A, this MOSFET can handle significant power levels, making it ideal for a wide range of applications.
• Reduced Gate Charge: The low gate charge (Qg) ensures faster switching speeds, which is crucial for high-frequency operations.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability under stress conditions.

Applications

The STF10N80K5 is a versatile component suitable for a broad spectrum of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency Converters
• Welding Equipment
• Solar Inverters
• UPS Systems

Package Information

The STF10N80K5 is housed in a TO-220FP package, which is designed to offer a high level of thermal performance and is suitable for through-hole mounting, enabling easy integration into a variety of circuit designs.

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STF10N80K5 MOSFET is manufactured with a robust design to ensure long-term reliability and performance in industrial and commercial applications.

For detailed specifications, technical documentation, and application support, visit the STMicroelectronics website or contact your local ST sales office.