The STF17N80K5 is a high-performance N-channel power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the MDmesh™ K5 series which utilizes innovative technology to offer excellent RDS(on) per area and reduced switching losses, making it well-suited for a wide range of high-efficiency applications.

Key Features

• Voltage Rating: The device can handle a maximum drain-source voltage (V<sub>DS) of 800V, providing a wide safety margin for applications that experience high voltage spikes or surges.
• Current Capacity: It has a continuous drain current (I<sub>D) of 17A at 25°C, which ensures reliable operation even under high current demands.
• Low On-Resistance: With an RDS(on) of 0.27Ω max, it offers low conduction losses, which is critical for improving energy efficiency in power conversion systems.
• Fast Switching: The MOSFET features a fast switching speed, which is essential for reducing switching losses in high-frequency power converters.
• High dv/dt Capability: Designed to withstand high voltage transitions, it is suitable for applications with fast switching requirements.
• 100% Avalanche Tested: Each unit is guaranteed to be reliable in applications that may induce avalanche conditions.

Applications

The STF17N80K5 is ideal for a range of power applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC/DC Converters
• Welding Equipment
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC) circuits

Package and Quality

Encased in a TO-220FP package, the STF17N80K5 is designed for easy mounting and heat dissipation. STMicroelectronics is committed to delivering high-quality products, and this MOSFET is no exception. It is produced in state-of-the-art manufacturing facilities, ensuring high reliability and performance consistency for the most demanding electronic designs.