STF21N65M5 - N-channel 650 V, 0.190 Ohm typ., 17 A MDmesh™ M5 Power MOSFET

The STF21N65M5 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed using the innovative MDmesh™ M5 technology. This device is tailored for high-efficiency applications, combining low on-resistance (R<sub>DS(on)) with a high breakdown voltage of 650 V, making it a perfect choice for a wide range of power conversion applications.

With a typical R<sub>DS(on) of just 0.190 Ohm and a maximum continuous drain current (I<sub>D) of 17 A, the STF21N65M5 ensures reduced conduction losses, contributing to overall system efficiency. The device is housed in a TO-220FP package, which is known for its robustness and excellent thermal performance, ensuring reliability even under high power and temperature conditions.

The MDmesh™ M5 technology leverages a proprietary vertical structure, which optimizes the R<sub>DS(on) area figure of merit. This allows for lower energy consumption during both the turn-on and turn-off phases of the device, which is critical for high-efficiency power supplies, lighting applications, solar inverters, and industrial applications such as welding equipment and motor drives.

Key features of the STF21N65M5 include:

• High breakdown voltage of 650 V for reliable operation in high voltage scenarios
• Ultra-low gate charge (Q<sub>g) for reduced switching losses
• Low threshold voltage (V<sub>th) to facilitate driving the MOSFET at lower voltages
• 100% avalanche tested, ensuring ruggedness and reliability
• Zener-protected to enhance robustness against voltage transients

The device also features excellent dv/dt capability, which is critical for applications that demand fast switching performance. Its gate charge and capacitances are optimized to achieve minimal switching losses, which is vital for high-frequency converters.

Whether you're designing an energy-efficient power supply or looking to improve the performance of your industrial application, the STF21N65M5 Power MOSFET from STMicroelectronics offers the reliability, efficiency, and performance you need. By integrating this MOSFET into your design, you can expect reduced power losses, enhanced thermal management, and an overall boost in your system's performance.