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STF30NM50N

Part No STF30NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 27A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 2740pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 13.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 042914-STF30NM50N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF30NM50N CAD Model

Description

STF30NM50N Power MOSFET by STMicroelectronics

The STF30NM50N is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This component is specifically engineered to meet the demanding requirements of modern power conversion applications, including switched-mode power supplies, DC-AC converters, motor control circuits, and high-efficiency power management systems.

With its advanced MDmesh™ technology, the STF30NM50N boasts an outstanding on-resistance (R<sub>DS(on)) of only 0.085 Ω, combined with a low gate charge (Q<sub>g), which significantly enhances the overall efficiency of the systems in which it is employed. The device operates at a maximum continuous drain current (I<sub>D) of 30 A, making it suitable for handling high current loads.

The MOSFET's high breakdown voltage of 500 V provides a substantial margin for safety in applications that may experience high voltage transients, ensuring reliability and robust performance under a variety of operating conditions. This feature, along with its fast switching speed, makes the STF30NM50N an ideal choice for power applications that require high voltage operation and fast response times.

Another notable characteristic of the STF30NM50N is its 100% avalanche tested design, which guarantees safe operation even under the most strenuous conditions. The device is also characterized by a very low intrinsic capacitance, which reduces switching losses and improves the thermal performance, allowing for a more compact and cost-effective heat-sinking solution.

The STF30NM50N is housed in a TO-220FP package, which is widely used in the industry and known for its ease of installation and excellent thermal properties. This package ensures that the MOSFET can be easily integrated into a wide range of electronic assemblies without the need for specialized mounting techniques.

In summary, the STF30NM50N from STMicroelectronics is a high-efficiency, high-voltage, and high-reliability component that is well-suited for a variety of power applications. Its cutting-edge technology and robust design make it a go-to choice for engineers looking to improve the performance and efficiency of their power conversion systems.

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