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STF7NM60N

Part No STF7NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.7A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 363pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-5 Full Pack
Win Source Part Number 066362-STF7NM60N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STF7NM60N CAD Model

Description

STF7NM60N - N-channel 600 V, 7 A MDmesh™ Power MOSFET

The STF7NM60N is a high-performance N-channel Power MOSFET from the renowned manufacturer STMicroelectronics. This state-of-the-art component is a part of the MDmesh™ family, which is well-known for its excellent on-state resistance (R<sub>DS(on)) and reduced gate charge, making it an ideal choice for a wide range of power applications.

With a breakdown voltage of 600 V, the STF7NM60N ensures robustness and reliability in high-voltage applications, offering a secure solution for designers. It is capable of delivering a continuous current of 7 A, making it suitable for demanding power supply and conversion systems. The device comes in a TO-220FP package, which is widely used and easy to integrate into various circuit designs.

The MOSFET's MDmesh™ technology is a revolutionary approach that combines a vertical structure with a proprietary strip layout, yielding one of the best R<sub>DS(on) per area ratios. This feature is particularly beneficial for applications that require high efficiency, as it minimizes conduction losses. Furthermore, the STF7NM60N exhibits a low gate charge (Q<sub>g), which enhances its switching performance, making it an excellent choice for high-frequency applications.

Designers may also appreciate the 100% avalanche tested feature of this MOSFET, which guarantees safe operation under extreme conditions. Additionally, the device boasts a low threshold voltage, which enables it to be driven at lower voltages, thus reducing power consumption.

Applications for the STF7NM60N are diverse and include Switch Mode Power Supplies (SMPS), LED lighting, DC-AC inverters for solar energy systems, and high-efficiency converters. Its robustness and efficiency also make it suitable for motor control applications and various industrial uses.

In summary, the STF7NM60N from STMicroelectronics represents a blend of high-voltage capability, efficiency, and reliability, making it a top choice for engineers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6078 $51.6630
205+ $0.4987 $102.2335
315+ $0.4831 $152.1765
430+ $0.4675 $201.0250
555+ $0.4519 $250.8045
745+ $0.4052 $301.8740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,895 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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