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STFH10N60M2

Part No STFH10N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 7.5A TO220FP / N-Channel 600 V 7.5A (Tc) 25W (Tc) Through Hole TO-220FPAB
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.5 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 100 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220FPAB
Case / Package TO-220-3 Full Pack
Base Product Number STFH10
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number -1138-STFH10N60M2,497-16593-5
Standard Package 46
Win Source Part Number 1325347-STFH10N60M2
Ultra Librarian 3D Model Ultra Librarian STFH10N60M2 CAD Model

Description

STFH10N60M2 - N-channel 600 V, 0.48 Ω typ., 10 A MDmesh™ M2 Power MOSFET in H2PAK-2 package

The STFH10N60M2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, renowned for its efficiency and reliability in a variety of power applications. This device is a member of the MDmesh™ M2 series, which utilizes an innovative proprietary vertical structure that is designed to deliver extremely low on-resistance (R<sub>DS(on)) and minimal gate charge (Q<sub>g), making it an excellent choice for high-efficiency power supplies, lighting applications, and industrial power management systems.

With a drain-source voltage (V<sub>DS) of 600 V, the STFH10N60M2 is well-suited for systems that require high voltage handling capabilities. Additionally, its low on-resistance of just 0.48 Ω typ. contributes to reduced conduction losses, thereby enhancing the overall efficiency of the application it is used in. The device is capable of handling continuous currents up to 10 A, making it robust enough to support a wide range of power demands.

The STFH10N60M2 comes in the H2PAK-2 package, which is designed for high power density and a compact footprint on the PCB. This package allows for efficient thermal management and is ideal for applications where space is at a premium but power handling cannot be compromised.

Key Features:

  • Extremely low on-resistance (R<sub>DS(on)) of 0.48 Ω typ.
  • High drain-source voltage (V<sub>DS) of 600 V
  • Continuous current rating of 10 A
  • Low gate charge (Q<sub>g)
  • High dv/dt and avalanche capabilities
  • 100% avalanche tested
  • H2PAK-2 package for high power density

Applications:

  • Switching applications
  • Power supplies (SMPS)
  • LED lighting
  • DC-DC converters
  • Motor control
  • Industrial and consumer applications

The STFH10N60M2 MOSFET is a testament to STMicroelectronics' commitment to providing power solutions that not only meet but exceed the requirements of modern high-efficiency power conversion systems. Its robustness, combined with low power losses, makes it an ideal choice for designers looking to optimize their power management designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1937 $59.6850
120+ $0.9794 $117.5280
185+ $0.9489 $175.5465
255+ $0.9182 $234.1410
330+ $0.8877 $292.9410
440+ $0.7958 $350.1520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,570 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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