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STFH24N60M2

Part No STFH24N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V
Power Dissipation (Max) 35W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack
Base Product Number STFH24
Other Names 497-16596-5
Standard Package 46
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278026-STFH24N60M2
Ultra Librarian 3D Model Ultra Librarian STFH24N60M2 CAD Model

Description

STFH24N60M2 - STMicroelectronics N-channel MOSFET

The STFH24N60M2 is a high-performance N-channel Power MOSFET from the renowned semiconductor manufacturer, STMicroelectronics. This cutting-edge component is specifically designed to meet the rigorous demands of modern power electronics applications. With a focus on efficiency and reliability, the STFH24N60M2 is an ideal choice for a wide range of switching applications, including power supplies, converters, motor drives, and lighting systems.

Featuring a robust and advanced MDmesh™ M2 technology, the STFH24N60M2 offers an outstanding on-state resistance (R<sub>DS(on)) of just 0.165 Ω, minimizing conduction losses and enhancing overall system efficiency. This technology also ensures a low gate charge (Q<sub>g), which translates to reduced switching losses, making this MOSFET an excellent choice for high-frequency applications.

With a maximum continuous drain current (I<sub>D) of 18 A and a drain-source voltage (V<sub>DS) of 600 V, the STFH24N60M2 is well-suited for handling high-power tasks. Its high threshold voltage (V<sub>th) ensures a reliable operation even under fluctuating voltage conditions, providing a stable performance throughout its usage.

One of the key advantages of the STFH24N60M2 is its TO-220FP fully molded package, which offers excellent thermal performance and is designed for through-hole mounting, allowing for easy integration into various circuit designs. The package also provides high isolation capability and a low thermal resistance, further enhancing the MOSFET's performance and longevity.

Safety and reliability are paramount, and the STFH24N60M2 does not disappoint. It features a 100% avalanche tested design, ensuring that it can withstand rugged conditions and repetitive avalanche events without degradation. Additionally, the device complies with the stringent standards of the automotive industry, making it suitable for automotive applications requiring high reliability.

In conclusion, the STFH24N60M2 from STMicroelectronics is a powerhouse MOSFET that combines high efficiency, robust performance, and reliability. Its advanced features make it a top choice for designers looking to optimize their power management systems with a component that offers both superior electrical characteristics and thermal performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7463 $52.3890
70+ $1.4329 $100.3030
110+ $1.3881 $152.6910
150+ $1.3433 $201.4950
195+ $1.2986 $253.2270
260+ $1.1642 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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