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STGB10NC60HDT4

Part No STGB10NC60HDT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description 600 V - 10 A - very fast IGBT | IGBT 600V 20A 65W D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 20A
Current - Collector Pulsed (Icm) 30A
Vce(on) (Maximum) at Vge, Ic 2.5V at 15V, 5A
Maximum Power 65W
Switching Energy 31.8μJ (on), 95μJ (off)
Input Type Standard
Gate Charge 19.2nC
Td (on/off) at 25°C 14.2ns/72ns
Test Condition 390V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr) 22ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Family Part Number STG*10NC
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261003-STGB10NC60HDT4
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGB10NC60HDT4 CAD Model

Description

STGB10NC60HDT4 - IGBT from STMicroelectronics

The STGB10NC60HDT4 is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics, a leader in semiconductor solutions. Designed for high-efficiency and fast-switching applications, this IGBT is an ideal choice for a variety of power electronics systems.

With a collector-emitter voltage of 600V and a collector current rating of 10A, the STGB10NC60HDT4 is capable of handling high power levels. Its low on-state voltage drop and low switching losses make it an energy-efficient option for designers. Furthermore, the device features a high frequency operation capability, which is essential for modern power applications requiring quick switching, such as motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.

The STGB10NC60HDT4 is built with STMicroelectronics' advanced trench gate field-stop technology, which provides an enhanced performance by reducing on-state voltage and improving switching speeds. This technology also contributes to the IGBT's robustness and reliability, ensuring a long operational life even under demanding conditions.

This IGBT comes in a D2PAK package, which is known for its compact size and excellent thermal characteristics. This makes the STGB10NC60HDT4 suitable for applications where space is at a premium and where maintaining a low thermal footprint is crucial. The package is also designed for easy mounting on a printed circuit board (PCB), facilitating the design and manufacturing process for electronic assemblies.

The device also includes features such as a co-packaged fast recovery diode, which further optimizes switching performance and enhances overall efficiency. Its robustness is reflected in its maximum operating junction temperature of 175°C, allowing it to function effectively in high-temperature environments.

In summary, the STGB10NC60HDT4 from STMicroelectronics is a high-performance IGBT that combines energy efficiency, fast switching, and thermal efficiency in a compact package. It is a reliable and versatile component suitable for a wide range of high-power applications.

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Quantity Unit Price Ext. Price
13+ $4.1328 $53.7264
30+ $3.3910 $101.7300
46+ $3.2851 $151.1146
63+ $3.1791 $200.2833
82+ $3.0731 $251.9942
109+ $2.7552 $300.3168
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Availability: 4,250 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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