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STGD10NC60SDT4

Part No STGD10NC60SDT4
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 18A 60W DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 18A
Pulsed Collector Current 25A
Collector-emitter saturation voltage(Max) 1.65V @ 15V, 5A
Maximum Power Dissipation 60W
Total Switching Energy(Ets) 60μJ (on), 340μJ (off)
Input Type Standard
Gate Charge 18nC
Turn-on and Turn-off delay time 19ns/160ns
Testing Conditions 390V, 5A, 10 Ohm, 15V
Reverse Recovery Time (trr) 22ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Win Source Part Number 1103014-STGD10NC60SDT4
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STGD10NC60SDT4 CAD Model

Description

The STGD10NC60SDT4 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This device is a part of the MDmesh™ series, which is renowned for its excellent energy efficiency and high power density. The STGD10NC60SDT4 is specifically designed to address the demanding needs of high-efficiency power conversion in applications such as switch-mode power supplies (SMPS), lighting, welding, and high-speed power switching circuits.

With a drain-source voltage (V<sub>DS) of 600V, the STGD10NC60SDT4 can handle high voltage applications with ease. Its current rating of 10A ensures that it can drive significant loads without overheating or failure. The device boasts a low on-resistance (R<sub>DS(on)) of 0.65Ω, which minimizes conduction losses and enhances overall system efficiency. The low gate charge (Q<sub>g) of this MOSFET allows for fast switching, further improving performance in applications where speed is critical.

The STGD10NC60SDT4 is also equipped with a fast recovery diode, optimized for high-frequency operation and soft switching. This feature is essential for reducing electromagnetic interference (EMI) and ensuring the reliability of the device in RF-sensitive environments. Its Zener-protected gate helps to prevent damage from electrostatic discharge (ESD), thus enhancing the robustness of the component.

The MOSFET is housed in a TO-252 (DPAK) surface-mount package, which not only saves precious board space but also facilitates better thermal management. The package design allows for efficient heat dissipation, ensuring that the device operates within its specified temperature range even under high-load conditions.

In summary, the STGD10NC60SDT4 from STMicroelectronics is an outstanding choice for designers looking to optimize their power management solutions. Its combination of high voltage capability, low on-resistance, fast switching, and integrated protection features make it a reliable and efficient component for a wide range of electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1586 $64.7580
70+ $1.7712 $123.9840
105+ $1.7159 $180.1695
140+ $1.6606 $232.4840
180+ $1.6051 $288.9180
245+ $1.4391 $352.5795
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,700 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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