The STI26NM60N is a high-performance N-Channel MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This power MOSFET is part of the MDmesh™ II Plus low Qg series, which is renowned for its outstanding efficiency and thermal performance.

Key Features

• Voltage Rating: The STI26NM60N boasts a robust maximum voltage rating of 600V, making it suitable for high-voltage applications.
• Current Capability: This MOSFET can handle a continuous drain current of 20A, allowing for significant power handling and conversion.
• Low On-Resistance: With an on-resistance of just 0.165 ohms, this device ensures minimal power loss and higher efficiency in electronic circuits.
• Fast Switching: The MOSFET features a low gate charge and low input capacitance which results in fast switching speeds, reducing switching losses.
• Improved Thermal Performance: The STI26NM60N comes in a TO-220 package that enhances thermal dissipation, ensuring reliability even under high temperature operating conditions.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, guaranteeing robustness and long-term reliability.

Applications

The STI26NM60N is versatile and can be used in a wide range of applications. Its high efficiency and power handling capabilities make it ideal for:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-efficiency DC/DC converters
• Motor Control Systems
• Power Management Solutions

Environmental and Quality Certifications

STMicroelectronics is committed to environmental sustainability and quality. The STI26NM60N complies with various international standards, including:

• RoHS compliant
• Pb-Free package
• REACH compliant

In summary, the STI26NM60N N-Channel MOSFET from STMicroelectronics is a highly efficient, robust, and reliable component that is well-suited for a variety of power applications that demand high voltage and current capabilities along with fast switching and low power losses.