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STI33N60M6

Part No STI33N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 25A I2PAK  /  N-Channel 600 V 25A (Tc) 190W (Tc) Through Hole I2PAK (TO-262)
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.4 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1515 pF @ 100 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number STI33
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-STI33N60M6
Standard Package 1,000
Win Source Part Number 987670-STI33N60M6
Ultra Librarian 3D Model Ultra Librarian STI33N60M6 CAD Model

Description

The STI33N60M6 is a high-performance N-channel Power MOSFET brought to you by STMicroelectronics, a leading name in the semiconductor industry. This state-of-the-art component is designed to meet a wide range of power management and switching requirements, making it a perfect fit for applications such as switch-mode power supplies, motor control, and high-efficiency converters.

Key Features

  • Advanced Technology: Utilizes STMicroelectronics' MDmesh™ M6 technology, which combines excellent RDS(on) per area with reduced gate charge and capacitance, leading to superior switching performance.
  • High Voltage Capability: With a breakdown voltage of 600V, the STI33N60M6 is capable of handling high voltage applications with ease, ensuring reliability and robustness in demanding situations.
  • Low On-Resistance: Features a very low on-state resistance (RDS(on)) of just 0.096 Ω, minimizing conduction losses and improving overall efficiency.
  • Enhanced Thermal Performance: The MOSFET's design includes an optimized package for improved heat dissipation, which allows for higher current carrying capacity and enhances the device's longevity.
  • Reduced Switching Losses: Offers fast switching speeds, which, when combined with low gate charge, result in reduced switching losses, making the STI33N60M6 suitable for high-frequency applications.

Applications

The versatility of the STI33N60M6 makes it an ideal choice for a variety of applications, including:

  • Power supply units (PSUs)
  • LED lighting systems
  • DC-DC converters
  • AC-DC converters
  • Motor drives and inverters
  • Power factor correction (PFC) circuits

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STI33N60M6 is no exception and is manufactured to the highest standards, ensuring both performance and reliability. It is RoHS compliant and qualified according to industrial standards, guaranteeing suitability for both industrial and commercial applications.

With its combination of efficiency, robustness, and versatility, the STI33N60M6 Power MOSFET from STMicroelectronics stands out as a top choice for engineers and designers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,529 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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