The STI47N60DM6AG is a state-of-the-art power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for their innovative and reliable components. This particular device is part of their MDmesh™ DM6 fast-recovery diode series, which is designed to offer extremely high efficiency for a wide range of applications.

Key Features

• High Voltage Capability: With a drain-source voltage (Vds) of 600V, the STI47N60DM6AG is well-suited for high voltage applications, providing a robust and efficient solution for power conversion challenges.
• Low On-Resistance: This MOSFET features an on-resistance (Rds(on)) of just 0.047 Ohms, which contributes to its high efficiency and low conduction losses, making it ideal for high-performance power supplies and converters.
• Fast Recovery Diode: The integrated fast-recovery diode is optimized for resonant and soft-switching applications, ensuring minimal energy waste during the switching process.
• Reduced Switching Losses: The device is engineered to have low gate charge (Qg) and low capacitances, which translates to reduced switching losses and improved overall performance.

Applications

The STI47N60DM6AG is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• Welding Equipment
• Solar Inverters
• UPS Systems
• High-Performance Power Management Systems

Quality and Reliability

As with all STMicroelectronics products, the STI47N60DM6AG is manufactured to the highest quality standards. It is designed to meet stringent reliability criteria, ensuring a long operational life and consistent performance in even the most demanding conditions.

Environmental Consideration

STMicroelectronics is committed to environmental sustainability. The STI47N60DM6AG is designed with eco-friendly considerations, adhering to international standards and reducing the environmental impact of electronic components.