The STIPN2M50-H is a cutting-edge power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for their innovative and reliable products. This particular MOSFET is part of ST's MDmesh™ M5 series, which utilizes the fifth generation of their proprietary super-junction technology that aims to deliver superior performance in a wide range of power applications.

Key Features

• Voltage Rating: The STIPN2M50-H boasts a high breakdown voltage of 500V, making it suitable for high voltage applications.
• Current Capacity: With a continuous drain current of 2A, this MOSFET can handle significant power levels, suitable for various electronic circuits and power management tasks.
• Low On-Resistance: The device features an extremely low on-resistance (RDS(on)) of 1.65 Ohm, which enhances its efficiency by minimizing conduction losses.
• Fast Switching: The fast switching speed of the STIPN2M50-H ensures efficient operation at high frequencies, which is beneficial for applications such as switch-mode power supplies and LED lighting systems.
• Operating Temperature: It is designed to operate over a wide temperature range from -55°C to 150°C, ensuring reliability and performance under various environmental conditions.

Applications

The STIPN2M50-H is versatile and can be used in a myriad of applications, including:

• Switch-mode power supplies (SMPS)
• LED lighting systems
• High-efficiency converters
• Power management circuits
• Motor control systems

Reliability and Safety

STMicroelectronics is committed to providing products that not only meet but exceed industry standards for reliability and safety. The STIPN2M50-H is no exception, featuring built-in protection against excessive voltage, current, and temperature, ensuring long-term stability and performance of your electronic systems.

Environmental Compliance

STMicroelectronics understands the importance of environmental sustainability. The STIPN2M50-H is designed with ecological considerations in mind, complying with RoHS and other environmental directives, making it an environmentally responsible choice for power MOSFET applications.