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STL15N60DM6

Part No STL15N60DM6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description DISCRETE
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 372mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 607 pF @ 100 V
Power Dissipation (Max) 64W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN
Base Product Number STL15
Standard Package 3,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1134748-STL15N60DM6
Ultra Librarian 3D Model Ultra Librarian STL15N60DM6 CAD Model

Description

STL15N60DM6 - N-channel 600 V, 0.190 Ohm typ., 14 A MDmesh™ DM6 Power MOSFET

The STL15N60DM6 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the latest MDmesh™ DM6 technology. This advanced MOSFET is ideal for a wide range of power applications, including switch-mode power supplies (SMPS), lighting, welding, and high-efficiency converters. Its 600 V breakdown voltage and low on-resistance of just 0.190 Ohm typ. ensure efficient power handling and reduced conduction losses.

Key Features:

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600 V, the STL15N60DM6 is suitable for applications requiring high voltage operation.
  • Low On-Resistance: A typical on-resistance (R<sub>DS(on)) of 0.190 Ohm minimizes conduction losses and improves overall efficiency.
  • High Current Rating: The device can handle continuous drain current (I<sub>D) up to 14 A, making it capable of powering demanding circuits.
  • Fast Switching Speed: The MOSFET is optimized for fast switching, reducing switching losses and improving performance in high-frequency applications.
  • Enhanced Efficiency: The MDmesh™ DM6 technology integrates a vertical structure that enhances current flow and reduces on-state resistance, thereby increasing efficiency.
  • Improved Ruggedness: The device offers increased ruggedness and immunity against the harsh conditions often found in industrial environments.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) facilitates faster switching and reduces the energy needed to control the MOSFET, leading to lower driving costs.

The STL15N60DM6 is housed in a TO-220 package, which is known for its robustness and good thermal performance, making it suitable for through-hole mounting. This packaging, combined with the MOSFET's advanced characteristics, ensures reliable and long-lasting performance in a variety of power applications.

STMicroelectronics' commitment to innovation is reflected in the STL15N60DM6, offering designers a powerful and efficient solution for their high-voltage power conversion challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8209 $52.3881
21+ $4.7762 $100.3002
33+ $4.6269 $152.6877
45+ $4.4777 $201.4965
58+ $4.3284 $251.0472
78+ $3.8806 $302.6868
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,914 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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