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STL19N60DM2

Part No STL19N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A PWRFLAT HV
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Features N-Channel 600 V 11A (Tc) 90W (Tc) Surface Mount PowerFlat™ (8x8) HV
Manufacturer STMicroelectronics
Series MDmesh™ DM2
Package Reel - TR
Part Status Obsolete
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerFlat™ (8x8) HV
Family Name STL19
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-16361-6, 497-16361-1, 497-16361-2
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935438-STL19N60DM2
Ultra Librarian 3D Model Ultra Librarian STL19N60DM2 CAD Model

Description

STL19N60DM2 - High Performance N-Channel MOSFET by STMicroelectronics

The STL19N60DM2 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, designed to deliver high efficiency and performance in a wide range of applications. This device is a part of ST's MDmesh™ M2 series, which utilizes an innovative vertical process technology to achieve extremely low on-resistance and high switching performance.

Key Features

  • Advanced MDmesh™ M2 Technology: The STL19N60DM2 benefits from the second generation of MDmesh technology, offering an optimal trade-off between on-resistance, switching speed, and gate charge.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600V, this MOSFET is suitable for high voltage applications, providing a wide safety margin for industrial and consumer electronic designs.
  • Low On-Resistance: The device boasts an exceptionally low on-state resistance (R<sub>DS(on)), minimizing conduction losses and improving overall efficiency.
  • High Current Rating: With a continuous drain current (I<sub>D) of 19A, it is capable of handling significant power levels, making it ideal for demanding applications.
  • Reduced Gate Charge (Q<sub>g): The STL19N60DM2 has a low gate charge, which enhances the switching performance and reduces switching losses.
  • 100% Avalanche Tested: This guarantees robust performance and reliability in applications where the MOSFET may experience high stress during operation.

Applications

The STL19N60DM2 is versatile and can be used in a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Motor Control
  • Welding Equipment
  • Power Factor Correction (PFC) circuits

With its robust design and advanced technology, the STL19N60DM2 from STMicroelectronics is an excellent choice for designers looking to enhance power efficiency and thermal performance in their next-generation electronic systems. The combination of high voltage capability, low on-resistance, and fast switching characteristics make it a powerful component for a wide array of power conversion and management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.5015 $60.1800
285+ $0.4116 $117.3060
435+ $0.3987 $173.4345
600+ $0.3858 $231.4800
775+ $0.3730 $289.0750
1,040+ $0.3344 $347.7760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,740 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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