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STL9P2UH7

Part No STL9P2UH7
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 9A POWERFLAT
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 22nC @ 4.5V
Max Input Capacitance 2390pF @ 16V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.9W (Tc)
Maximum Rds On at Id,Vgs 22.5 mOhm @ 4.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerFlat (3.3x3.3)
Dimension 8-PowerVDFN
Win Source Part Number 1103211-STL9P2UH7
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian STL9P2UH7 CAD Model

Description

STL9P2UH7 Power MOSFET by STMicroelectronics

The STL9P2UH7 is a high-performance Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This product is part of STMicroelectronics' STripFET™ VII DeepGATE™ technology, which is renowned for its superior power efficiency and thermal performance. The STL9P2UH7 is designed to cater to a wide range of applications, including but not limited to, switch-mode power supplies (SMPS), power management systems, and high-efficiency converters.

With an emphasis on reducing on-state resistance (R<sub>DS(on)) and gate charge (Q<sub>g), this MOSFET ensures minimal conduction and switching losses, which is critical for energy-sensitive designs. Its low threshold voltage enables the device to be driven at lower gate voltages, thus enhancing its suitability for low-voltage applications that require high-density power management.

Key features of the STL9P2UH7 include:

  • Ultra-low gate charge and on-state resistance
  • 100% avalanche tested to guarantee robustness
  • High threshold voltage for improved noise immunity
  • Low capacitance to minimize driver losses
  • Enhanced body diode ruggedness for reliable operation in harsh conditions

This MOSFET also boasts a compact and environmentally friendly design, with a lead-free package that complies with the RoHS directive, making it a sustainable choice for eco-conscious applications. The STL9P2UH7 is available in a surface-mount package which facilitates easy integration into various circuit designs, providing flexibility for PCB designers.

STMicroelectronics' commitment to quality ensures that the STL9P2UH7 MOSFET meets the highest standards of performance and reliability. Whether you are developing power supply solutions or working on high-efficiency power conversion, the STL9P2UH7 offers a combination of features that can help achieve optimal system performance. For detailed specifications, application notes, and support resources, designers and engineers are encouraged to visit the STMicroelectronics website or contact their support team.

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