STN3N40K3 - N-channel 400 V, 2.3 Ω typ., 3 A SuperMESH™3 Power MOSFET in a DPAK package
The STN3N40K3 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is part of the SuperMESH™3 family, which is renowned for its exceptional efficiency, low power consumption, and high reliability. It is designed to meet the stringent requirements of a wide range of electronic applications, including switched-mode power supplies, lighting, and power management systems.
Featuring state-of-the-art technology, the STN3N40K3 offers a drain-source voltage (V<sub>DS) of 400 V, which ensures that the device can handle high voltage applications with ease. The MOSFET comes with a low on-resistance (R<sub>DS(on)) of just 2.3 Ω typical, providing excellent conduction properties and contributing to reduced power losses in operation. This makes it an ideal choice for energy-sensitive circuits where efficiency is paramount.
With a continuous drain current (I<sub>D) of 3 A, the STN3N40K3 is capable of driving moderate loads while maintaining thermal stability. The device is encapsulated in a DPAK package, which is known for its compact footprint and excellent thermal performance, allowing for better heat dissipation and enhanced durability under high switching frequencies or high ambient temperatures.
Additional features of the STN3N40K3 include a fast switching speed, which is essential for reducing switching losses in high-frequency applications. The MOSFET also boasts a low gate charge (Q<sub>g), which further minimizes switching losses and improves overall system efficiency.
STMicroelectronics has equipped the STN3N40K3 with robust protection features such as 100% avalanche tested guarantees, which ensure safe operation under extreme conditions. The device also complies with the RoHS directive, making it an environmentally friendly choice for manufacturers looking to create green products.
In summary, the STN3N40K3 from STMicroelectronics is a high-performance, energy-efficient Power MOSFET that is suitable for a variety of high voltage applications. Its low on-resistance, fast switching speed, and strong thermal performance make it a reliable and cost-effective choice for designers and engineers.
