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STP150N10F7

Part No STP150N10F7
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 110A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 117nC @ 10V
Max Input Capacitance 8115pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 55A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 212347-STP150N10F7
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP150N10F7 CAD Model

Description

STP150N10F7 - Power MOSFET from STMicroelectronics

The STP150N10F7 is a state-of-the-art N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and high-performance components. This MOSFET is part of ST's STripFET™ F7 series, which is renowned for its low on-resistance and low gate charge, making it an excellent choice for high-efficiency power management applications.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The STP150N10F7 boasts a very low on-state resistance, which translates into reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Switching Performance: With its low gate charge and capacitance, the device enables fast switching, which is essential for reducing switching losses and improving performance in applications such as DC/DC converters, motor drivers, and power management systems.
  • 100V Drain-Source Voltage (V<sub>DS): The robust design allows for a maximum drain-source voltage of 100V, making it suitable for a wide range of high-voltage applications.
  • High Continuous Drain Current (I<sub>D): The STP150N10F7 can handle a continuous drain current of up to 120A, accommodating high current demands in power-intensive applications.
  • Enhanced Thermal Performance: The MOSFET is encapsulated in a TO-220 package, which offers excellent thermal performance and ensures reliability even under high temperature operating conditions.

Applications

The STP150N10F7 is versatile and can be utilized in a variety of applications, including:

  • Synchronous rectification for Switch Mode Power Supplies (SMPS)
  • High-efficiency DC/DC converters
  • Motor control and drive systems
  • Power management solutions
  • Automotive and industrial applications

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STP150N10F7 Power MOSFET is no exception and is built to meet the stringent requirements of industrial and automotive-grade applications. It provides designers with a reliable and efficient solution for their high-power density designs.

For detailed technical specifications, application notes, and support documentation, customers can visit the official STMicroelectronics website or contact their local ST sales office.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0617 $53.0850
115+ $0.8712 $100.1880
180+ $0.8440 $151.9200
245+ $0.8167 $200.0915
320+ $0.7895 $252.6400
425+ $0.7078 $300.8150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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