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STP16N60M2

Part No STP16N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A TO220  /  N-Channel 600 V 12A (Tc) 110W (Tc) Through Hole TO-220
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP16
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-16022-5,-497-16022-5
Standard Package 50
Win Source Part Number 1097198-STP16N60M2
Ultra Librarian 3D Model Ultra Librarian STP16N60M2 CAD Model

Description

STP16N60M2 - Power MOSFET by STMicroelectronics

The STP16N60M2 is a high-performance N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of STMicroelectronics' MDmesh™ M2 series that utilizes an innovative proprietary vertical structure, resulting in a product that offers extremely low on-resistance and reduced gate charge. These features make the STP16N60M2 an ideal choice for a wide range of high-efficiency applications.

With a drain-source voltage (V<sub>DS) of 600V and a continuous drain current (I<sub>D) of 16A, the STP16N60M2 is capable of handling significant power and is well-suited for high voltage switching applications. The device's threshold voltage (V<sub>th) is specified at a range of 2.0V to 4.0V, ensuring consistent performance across various conditions.

The STP16N60M2 boasts a low gate charge (Q<sub>g), which enhances the switching performance, making it more efficient for applications such as Switch Mode Power Supplies (SMPS), lighting, DC-AC inverters for solar energy systems, and Uninterruptible Power Supplies (UPS). The low on-resistance (R<sub>DS(on)) also means that the device generates less heat during operation, contributing to the reliability and longevity of the product.

Engineered with Zener-protection, the STP16N60M2 provides enhanced robustness against voltage transients, making it more resilient in harsh electrical environments. This feature is particularly valuable in industrial and automotive applications where voltage spikes are common.

The MOSFET is encapsulated in a TO-220 package, which is widely used in commercial and industrial applications due to its ability to dissipate heat effectively. The package is also designed for easy mounting on heat sinks, further aiding thermal management.

To facilitate easy integration into various circuit designs, STMicroelectronics provides comprehensive technical documentation, including datasheets, application notes, and simulation models for the STP16N60M2. This support ensures that engineers can optimize the MOSFET's performance in their specific applications.

In summary, the STP16N60M2 from STMicroelectronics is a robust and efficient solution for designers looking to improve power management in their electronic systems, combining low on-resistance, high voltage capability, and enhanced switching performance in a reliable package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9680 $59.0400
75+ $1.6148 $121.1100
115+ $1.5643 $179.8945
155+ $1.5139 $234.6545
200+ $1.4635 $292.7000
265+ $1.3121 $347.7065
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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