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STP180N10F3

Part No STP180N10F3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 114.6nC @ 10V
Max Input Capacitance 6665pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 315W (Tc)
Maximum Rds On at Id,Vgs 5.1 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 054256-STP180N10F3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP180N10F3 CAD Model

Description

The STP180N10F3 is a high-performance, N-channel Power MOSFET produced by the renowned semiconductor manufacturer, STMicroelectronics. This MOSFET is designed to deliver the efficiency and speed needed for a wide range of power applications, including but not limited to, switch-mode power supplies (SMPS), power management systems, and high-efficiency DC-DC converters.

Key Features

  • Low On-Resistance: The STP180N10F3 boasts an extremely low on-resistance (RDS(on)) of 9.5 mΩ max, which significantly reduces conduction losses, enhancing overall system efficiency.
  • High Current Capability: With a continuous drain current (ID) of 180 A, this MOSFET can handle high current loads, making it suitable for demanding applications.
  • High Switching Speed: The fast switching performance of this device minimizes switching losses and improves power efficiency, especially in high-frequency operations.
  • 100% Avalanche Tested: Guaranteeing robustness and reliability, the STP180N10F3 is thoroughly tested for avalanche ruggedness, ensuring it can withstand harsh operating conditions.
  • Low Gate Charge: The MOSFET has a low gate charge (Qg), which reduces the driving power required and simplifies the design of the driving circuit.

Applications

The STP180N10F3's combination of high current capability, low on-resistance, and fast switching performance makes it an ideal choice for a variety of applications, including:

  • High-efficiency switch-mode power supplies (SMPS)
  • Power management systems
  • DC-DC converters
  • Motor control systems
  • Automotive applications
  • High-performance computing

Environmental and Quality Standards

STMicroelectronics is committed to environmental sustainability and quality. The STP180N10F3 is designed to meet various international standards, ensuring both environmental friendliness and the highest quality for electronic components.

Summary

In conclusion, the STP180N10F3 from STMicroelectronics is a powerful and reliable component that offers efficiency and performance for advanced electronic systems. Its robust design and exceptional features make it a top choice for engineers and designers seeking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5131 $60.5240
95+ $1.2416 $117.9520
145+ $1.2035 $174.5075
200+ $1.1642 $232.8400
260+ $1.1250 $292.5000
345+ $1.0095 $348.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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