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STP18N60M6

Part No STP18N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 13A TO220  /  N-Channel 600 V 13A (Tc) 110W (Tc) Through Hole TO-220
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 100 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Product Number STP18
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 976471-STP18N60M6
Ultra Librarian 3D Model Ultra Librarian STP18N60M6 CAD Model

Description

The STP18N60M6 is a high-performance N-channel Power MOSFET manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable electronic components. This MOSFET is part of their MDmesh™ M6 series, which employs the latest advancements in superjunction technology to offer excellent on-state resistance and switching performance, making it suitable for a wide range of high-efficiency applications.

Key Features

  • Voltage Rating: The device is rated for a drain-source voltage (V<sub>DS) of 600V, making it suitable for high-voltage applications.
  • Current Handling: It can handle continuous drain current (I<sub>D) up to 13A, providing robust performance for a variety of power requirements.
  • Low On-Resistance: The STP18N60M6 boasts an extremely low on-state resistance (R<sub>DS(on)) of 0.280 ohms, minimizing conduction losses and improving overall efficiency.
  • Fast Switching Speed: Fast switching characteristics reduce switching losses and improve performance in high-frequency circuits.
  • Enhanced Efficiency: The MDmesh™ M6 technology optimizes the trade-off between on-state resistance and capacitance to maximize efficiency.
  • High dv/dt Capability: The device is designed to handle high voltage transients, ensuring reliability under harsh conditions.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, guaranteeing reliable performance in applications subject to high energy pulses.

Applications

The STP18N60M6 is ideal for a variety of power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Power Factor Correction (PFC) Circuits
  • Motor Drives and Inverters
  • Welding Equipment

Quality and Reliability

STMicroelectronics ensures that the STP18N60M6 meets the highest quality and reliability standards. The device is encapsulated in a TO-220 package, known for its durability and thermal efficiency. With these features, the STP18N60M6 stands out as a reliable choice for designers looking to optimize their power systems with a MOSFET that offers both high performance and energy efficiency.

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