STP18N65M5 - STMicroelectronics

The STP18N65M5 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This product is part of ST's MDmesh™ M5 series, which is known for its excellent energy efficiency and high power density. With a drain-source voltage (V_DS) of 650V, the STP18N65M5 is designed to handle high voltage applications with ease.

This MOSFET utilizes an innovative proprietary vertical structure, which combines the benefits of reduced on-resistance (R_DS(on)) and minimized gate charge (Q_g) to enhance overall system efficiency. The low threshold voltage (V_th) ensures that the device can be driven at lower gate voltages, further optimizing power consumption for a wide range of applications.

The STP18N65M5 is encapsulated in a TO-220 package, which is widely recognized for its robustness and excellent thermal performance. This makes the MOSFET a perfect choice for demanding environments where high reliability and durability are essential. The device features a continuous drain current (I_D) of 18A, providing ample current handling capability for a variety of power applications.

One of the key applications of the STP18N65M5 is in switch mode power supplies (SMPS), where its fast switching characteristics and low power dissipation contribute to the design of compact and efficient power converters. Additionally, it is suitable for a range of other high voltage applications including lighting, welding, and motor drives.

For design flexibility, the STP18N65M5 is 100% avalanche tested, ensuring ruggedness and reliability under harsh operating conditions. The device also features Zener-protected gate, providing enhanced protection against overvoltage events.

In summary, the STP18N65M5 from STMicroelectronics offers a combination of high voltage capability, energy efficiency, and thermal performance, making it an excellent choice for designers looking to improve the performance and reliability of their power management systems.