The 2SJ245L is a P-channel vertical type MOSFET manufactured by Hitachi. It is designed for high-frequency power amplifier applications. This MOSFET features a low on-resistance and high-speed switching capabilities, making it suitable for demanding RF applications. It comes in a TO-220 package.

Applications

• High-Frequency Power Amplifiers
• RF Transmitters
• Switching Regulators
• DC-DC Converters

Features

• P-Channel Vertical MOSFET
• Low On-Resistance (RDS(on))
• High-Speed Switching
• High Input Impedance
• Avalanche Resistance Capability

Benefits

• Improved power efficiency in RF amplifiers due to low on-resistance.
• Enhanced switching performance in high-frequency circuits.
• Simplified circuit design due to high input impedance.
• Increased reliability and robustness due to avalanche resistance.
• Reduced heat dissipation in power applications.

Additional Details

The 2SJ245L has a drain-source voltage (VDS) rating of -60V and a continuous drain current (ID) of -8A. Its gate-source voltage (VGS) is rated at ±20V. The maximum power dissipation (PD) is 40W. The typical on-resistance (RDS(on)) is 0.4 ohms. The input capacitance is typically 450 pF, and the rise time is typically 25 ns. This MOSFET is commonly used in applications where efficient and fast switching is required, making it a suitable choice for RF power amplifier designs.