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Same model may have multiple batches, images only for reference.
C3M0021120D Real Image
Same model may have multiple batches, images only for reference.

C3M0021120D

Part No C3M0021120D
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 100A TO247-3 / N-Channel 1200 V 100A (Tc) 469W (Tc) Through Hole TO-247-3
Datasheet
C3M0021120D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 28.8mOhm @ 50A, 15V
Vgs(th) (Max) @ Id 3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 4818 pF @ 1000 V
Power Dissipation (Max) 469W (Tc)
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-3
Case / Package TO-247-3
Base Product Number C3M0021120
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 1697-C3M0021120D,-3312-C3M0021120D
Standard Package 30
Win Source Part Number 1325245-C3M0021120D
Ultra Librarian 3D Model Ultra Librarian C3M0021120D CAD Model

Description

The Wolfspeed, Inc. electronic component with Win Source Part Number 1325245-C3M0021120D is a discrete semiconductor product that falls under the category of transistors - FETs, MOSFETs - single.

  • Packaging: tube
  • Package Quantity: 30
  • Technology: SiCFET (Silicon Carbide)
  • FET Type: N-channel
  • Drain to Source Voltage (Vdss): 1200 V
  • Continuous Drain Current (Id): 100A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 28.8mOhm @ 50A, 15V
  • Power Dissipation: 469W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 15 V
  • RoHS3 Compliant: Yes

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