STP28N65M2 - N-channel 650 V, 0.190 Ohm typ., 21 A MDmesh™ M2 Power MOSFET in a TO-220 package

The STP28N65M2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, one of the leaders in semiconductor technology. This device is a part of the MDmesh™ M2 series, which is renowned for its excellent energy efficiency and performance, especially in high-voltage applications. The STP28N65M2 is designed to meet the stringent requirements of modern electronic circuits, providing a combination of low on-resistance and high switching speeds.

With a 650 V breakdown voltage, the STP28N65M2 is well-suited for high-voltage applications, ensuring that the device can handle spikes and surges without compromising its integrity. The 0.190 Ohm typical on-resistance indicates minimal power loss during operation, which translates to improved overall efficiency and reduced thermal stress on the system.

The device can sustain a continuous current of 21 A, making it capable of powering a wide range of applications from power supplies to lighting solutions, and even inverter circuits for renewable energy sources. Its robustness is further enhanced by its TO-220 package, which not only provides a solid mechanical structure but also improves thermal management due to its superior heat dissipation characteristics.

The STP28N65M2 incorporates STMicroelectronics' revolutionary MDmesh™ technology, which optimizes the vertical structure of the MOSFET to reduce on-resistance and conduction losses. This technology, combined with the device's fast-switching capabilities, makes it an excellent choice for high-efficiency power conversion applications, including resonant and hard-switching topologies.

Overall, the STP28N65M2 is an exceptional component for designers looking to improve the efficiency and reliability of their high-voltage power systems. Its advanced features and robust package guarantee that it will continue to be a preferred choice for a wide array of power applications.