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STP32N65M5

Part No STP32N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 24A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 72nC @ 10V
Max Input Capacitance 3320pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 119 mOhm @ 12A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 042940-STP32N65M5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP32N65M5 CAD Model

Description

STP32N65M5 - N-channel 650 V, 0.029 Ohm typ., 31 A MDmesh™ V Power MOSFET in a TO-220 package

The STP32N65M5 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, a leader in the semiconductor industry. This device is part of the MDmesh™ V series, which is renowned for its outstanding efficiency and performance, particularly in high-voltage applications. The STP32N65M5 is designed to address the demanding needs of modern electronic circuits, providing a perfect combination of low on-resistance and high switching speeds.

With a voltage rating of 650 V, the STP32N65M5 is well-suited for a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, solar inverters, and other power conversion systems. Its low on-resistance of just 0.029 Ohm typ. ensures that power losses are kept to a minimum, thereby improving overall system efficiency and reliability. Moreover, the device is capable of handling continuous currents up to 31 A, making it a robust option for high-power applications.

The STP32N65M5 is housed in a TO-220 package, which is a widely used and recognized form factor in the industry. This package provides an optimal balance between thermal performance and size, making it easy to integrate into various designs without compromising on power dissipation capabilities.

One of the key features of the MDmesh™ V technology is its extremely low gate charge (Qg), which translates to reduced switching losses. This, combined with the device's fast recovery diode, ensures that the STP32N65M5 delivers high efficiency across a wide range of operating frequencies. The device also boasts a high avalanche ruggedness, which provides designers with an additional level of security in harsh operating conditions.

In summary, the STP32N65M5 from STMicroelectronics is a high-performance Power MOSFET that offers an excellent solution for designers looking to enhance power efficiency and thermal management in their high-voltage applications. Its robust design, combined with advanced MDmesh™ V technology, makes it a reliable and effective component for a multitude of power conversion challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12,200+ $0.0048 $58.5600
29,415+ $0.0039 $114.7185
45,455+ $0.0039 $177.2745
62,500+ $0.0037 $231.2500
80,650+ $0.0036 $290.3400
107,145+ $0.0032 $342.8640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,400 pieces
MOQ: 12200 pcs
Order Increment : 1 pcs
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