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STP5N80

Part No STP5N80
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 800 V, 1.50 OHM TYP.,
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 177pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 1.75 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 194612-STP5N80
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP5N80 CAD Model

Description

STP5N80 Power MOSFET by STMicroelectronics

The STP5N80 is a robust power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This high-performance component is specifically engineered to address a wide range of power applications, offering a combination of low on-resistance and high blocking voltage capability. The STP5N80 is an ideal choice for designers looking to improve efficiency, thermal management, and reliability in their power management systems.

Key Features:

  • High Blocking Voltage: The STP5N80 boasts a high drain-source breakdown voltage of 800V, making it suitable for high-voltage applications. This feature ensures that the MOSFET can handle significant voltage without breakdown, providing a reliable solution for systems that experience high voltage transients.
  • Low On-Resistance: With an on-resistance of typically 1.7 Ohm, this MOSFET ensures minimal conduction losses, enhancing the overall efficiency of the application it is used in. This low RDS(on) also contributes to reduced heat generation, which can extend the lifespan of the device.
  • High Current Capability: The STP5N80 is capable of handling continuous drain currents up to 5A, making it suitable for a variety of power-intensive applications. This high current capability allows for efficient power conversion and control in a compact form factor.
  • Avalanche Ruggedness: Designed for rugged applications, the STP5N80 can safely absorb high energy in avalanche and commutation modes. This feature provides an additional layer of protection against unexpected voltage spikes, enhancing the durability of the component.
  • Low Gate Charge: The low gate charge of the STP5N80 facilitates faster switching speeds, which is advantageous in applications requiring high-frequency operation. This characteristic helps in reducing switching losses, contributing to the overall efficiency of the power system.

Applications:

The STP5N80's versatile characteristics make it well-suited for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High-Efficiency DC-DC Converters
  • Motor Control Systems
  • LED Lighting Solutions
  • Power Factor Correction Circuits

STMicroelectronics' commitment to innovation is reflected in the STP5N80, offering designers a reliable and efficient MOSFET option for their high-voltage power management needs. Its combination of electrical robustness, thermal efficiency, and high current handling capability makes it a prime choice for modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3539 $58.8475
60+ $1.9312 $115.8720
93+ $1.8711 $174.0123
128+ $1.8110 $231.8080
166+ $1.7498 $290.4668
221+ $1.5696 $346.8816
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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