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STP76NF75

Part No STP76NF75
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 80A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 160nC @ 10V
Max Input Capacitance 3700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1103707-STP76NF75
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STP76NF75 CAD Model

Description

STP76NF75 - N-channel 75V - 0.0095 Ohm - 80A - TO-220 STripFET™ II Power MOSFET

The STP76NF75 is a high-performance N-channel Power MOSFET produced using STMicroelectronics' advanced STripFET™ II technology. This MOSFET is part of the STripFET™ series, which is well-known for its superior switching performance and efficiency. The device is designed to handle a drain-source voltage (VDS) of up to 75 volts and offers a low on-resistance (RDS(on)) of just 0.0095 ohms.

With a continuous drain current (ID) of 80A, the STP76NF75 is optimized for use in high-power applications that require efficient power conversion, such as switch-mode power supplies (SMPS), DC-AC inverters for Uninterruptible Power Supplies (UPS), motor control, and automotive applications. The TO-220 package is widely used and suitable for through-hole mounting, which provides good thermal performance and is easy to handle in various electronic assemblies.

Key features of the STP76NF75 include:

  • Exceptional dv/dt capability, ensuring reliability in high-switching-speed applications.
  • 100% avalanche tested, guaranteeing robustness and reliability in adverse operating conditions.
  • Low gate charge and minimal input capacitance, which contribute to reduced power dissipation during switching.
  • High current carrying capability, making it suitable for demanding power applications.

STMicroelectronics has designed the STP76NF75 with an emphasis on minimizing conduction losses and maximizing efficiency, which is critical for energy-sensitive systems. The device's low threshold voltage ensures that it can be driven by low-voltage control signals, making it compatible with a wide range of drive circuits and microcontrollers.

For engineers and designers looking for a robust and efficient solution for high-power switching applications, the STP76NF75 offers a combination of high performance, reliability, and versatility. It represents STMicroelectronics' commitment to providing advanced power solutions that meet the evolving needs of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0233 $60.6990
70+ $1.6601 $116.2070
110+ $1.6082 $176.9020
150+ $1.5564 $233.4600
195+ $1.5045 $293.3775
260+ $1.3488 $350.6880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,400 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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