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STP80N6F6

Part No STP80N6F6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 122nC @ 10V
Max Input Capacitance 7480pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 5.8 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1103714-STP80N6F6
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STP80N6F6 CAD Model

Description

STP80N6F6 - N-Channel MOSFET from STMicroelectronics

The STP80N6F6 is a high-performance N-Channel MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. This robust power MOSFET is designed to deliver high efficiency and reliability for a wide range of applications, including power supplies, motor control, automotive systems, and other power management tasks.

Key Features

  • High Current Capability: The STP80N6F6 is capable of handling continuous drain currents up to 80A, making it suitable for high-power applications.
  • Low On-Resistance: With an on-resistance of only 6.2mΩ (max), this MOSFET ensures minimal power loss and improved overall efficiency.
  • High Voltage Threshold: The device can sustain drain-source voltages up to 60V, providing a good safety margin for fluctuating supply voltages.
  • Fast Switching Performance: The MOSFET's optimized gate charge and low intrinsic capacitances enable fast switching, reducing transition losses.
  • Robust Thermal Performance: The STP80N6F6 boasts an excellent thermal performance with a maximum junction temperature of 175°C, allowing for stable operation even under thermal stress.
  • Enhanced Durability: Designed with STMicroelectronics' MDmesh™ technology, it offers improved ruggedness and endurance against repetitive avalanche events.

Applications

The versatility of the STP80N6F6 N-Channel MOSFET makes it an ideal choice for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Drives and Inverters
  • Automotive Applications
  • Battery Management Systems
  • Power Management Circuits

Quality and Reliability

STMicroelectronics is committed to delivering products of the highest quality. The STP80N6F6 MOSFET is no exception, with its design and manufacturing processes tailored to ensure reliability and performance in even the most demanding situations. It is RoHS compliant and adheres to the stringent international standards set for electronic components.

Whether you are designing a new power system or seeking to improve an existing one, the STP80N6F6 offers the performance, efficiency, and reliability that engineers and designers need to create superior electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7044 $51.3836
46+ $2.2190 $102.0740
70+ $2.1497 $150.4790
97+ $2.0803 $201.7891
125+ $2.0110 $251.3750
167+ $1.8030 $301.1010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,800 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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